NP80N04MLG, NP80N04NLG, NP80N04PLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
8
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
8
6
V GS = 4.5 V
6
V GS = 4.5 V
4
10 V
4
10 V
2
Pulsed
2
Pulsed
0
NP80N04MLG, NP80N04NLG
0
NP80N04PLG
1
10
100
1000
1
10
100
1000
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
I D = 40 A
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
I D = 40 A
8
Pulsed
8
Pulsed
6
4
2
0
NP80N04MLG, NP80N04NLG
6
4
2
0
NP80N04PLG
0
4
8
12
16
20
0
4
8
12
16
20
V GS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
V GS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
6
4
2
V GS = 4.5 V, I D = 35 A
10 V, 40 A
Pulsed
8
6
4
2
V GS = 4.5 V, I D = 35 A
10 V, 40 A
Pulsed
0
NP80N04MLG, NP80N04NLG
0
NP80N04PLG
-75
-25
25
75
125
175
225
-75
-25
25
75
125
175
225
6
T ch - Channel Temperature - ° C
Data Sheet D19797EJ1V0DS
T ch - Channel Temperature - ° C
相关PDF资料
NP80N04NUG-S18-AY MOSFET N-CH 40V 80A TO-262
NP80N055MDG-S18-AY MOSFET N-CH 55V 80A TO-220
NP80N055MHE-S18-AY MOSFET N-CH 55V 80A TO-220
NP80N055MLE-S18-AY MOSFET N-CH 55V 80A TO-220
NP82N03PUG-E1-AZ MOSFET N-CH 30V 82A TO-263
NP82N04MDG-S18-AY MOSFET N-CH TO-220
NP82N04MUG-S18-AY MOSFET N-CH TO-220
NP82N04NLG-S18-AY MOSFET N-CH 40V 82A TO-262
相关代理商/技术参数
NP80N04NUG 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP80N04NUG-S18-AY 功能描述:MOSFET N-CH 40V 80A TO-262 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP80N04PDG 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP80N04PDG-E1B-AY 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 80A T/R 制造商:Renesas Electronics Corporation 功能描述:SINGLE MOSFET, NCH, 40V, TO263ZP - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 40V 80A MP-25K
NP80N04PDG-E2B-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP80N04PLG 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP80N04PLG-E1B-AY 功能描述:MOSFET N-CH 40V 80A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP80N04PLG-E2B-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR